I-V characteristics of polycrystalline silicon resistors
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چکیده
2014 The electrical properties of polycrystalline silicon resistors in the non-linear regime are examined. The adopted model is based on a thermionic-diffusion transport mechanism, and assumes charge trapping at the grain boundary. The theory closely fits experimental I-V characteristics, and allows for the determination of the average grain size. REVUE DE PHYSIQUE APPLIQUÉE TOME 13, DÉCEMBRE 1978,
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تاریخ انتشار 2016